ACTIVATION-ENERGY FOR C94 AND C54 TISI2 FORMATION MEASURED DURING RAPID THERMAL ANNEALING

The activation energies E(a) for C49 and C54 TiSi2 formation were dete rmined using in situ resistance measurements during rapid thermal anne aling. Ti films were evaporated on undoped polycrystalline Si (poly-Si ) and single-crystal Si on sapphire (SOS) substrates. The resistance w as monitored for heating rates from 1 to 95 -degrees-C/s up to 1000 -d egrees-C. The E(a)'s determined from Kissinger plots were 1.86+/-0.23 and 1.65+/-0.31 eV for C49 TiSi2 formation and 3.30+/-0.16 and 3.67+/- 0.13 eV for C54 TiSi2 formation for Ti/poly-Si and Ti/SOS samples, res pectively. These are the first reported measurements of E(a)'s for C49 and C54 TiSi2 formation at such high heating rates. The formation seq uence remained the same for the range of heating rates examined. (C) 1 994 American Institute of Physics.