DEPENDENCE ON THE IN CONCENTRATION OF THE PIEZOELECTRIC FIELD IN (111)B INGAAS GAAS STRAINED HETEROSTRUCTURES/

A series of (111)B InxGa1-x(As/GaAs multiple quantum well p-i-n struct ures have been investigated via low temperature photocurrent and photo luminescence spectroscopies. The indium mole fraction was in the range of 0.07-0.23. Evolution of the experimental blueshifts of the transit ion energies, with the external bias, agreed very well with the theore tical calculations. This allowed us to obtain precise information abou t the piezoelectric constant, e14, for the various In compositions. Fo r the range of x investigated, we have found e14(x) to be linear with x but significantly lower than predicted by a simple linear interpolat ion of the accepted values for GaAs and InAs. (C) 1994 American Instit ute of Physics.