GROWTH AND ELECTRICAL-TRANSPORT PROPERTIES OF VERY HIGH-MOBILITY 2-DIMENSIONAL HOLE GASES DISPLAYING PERSISTENT PHOTOCONDUCTIVITY

Authors
HENINI M RODGERS PJ CRUMP PA GALLAGHER BL HILL G
Citation
M. Henini et al., GROWTH AND ELECTRICAL-TRANSPORT PROPERTIES OF VERY HIGH-MOBILITY 2-DIMENSIONAL HOLE GASES DISPLAYING PERSISTENT PHOTOCONDUCTIVITY, Applied physics letters, 65(16), 1994, pp. 2054-2056
Citations number
22
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
65
Issue
16
Year of publication
1994
Pages
2054 - 2056
Database
ISI
SICI code
0003-6951(1994)65:16<2054:GAEPOV>2.0.ZU;2-D
Abstract
We report on the growth by molecular beam epitaxy of modulation-doped GaAs-(Ga,Al)As heterostructures with low-temperature hole mobility exc eeding 1.2 x 10(6) cm2 V-1 s-1 with carrier concentrations as low as 0 .8 x 10(11) cm-2: The highest value observed at such low densities. We also report the first observation of persistent positive photoconduct ivity in a two-dimensional hole gas. An analysis of the number density and temperature dependence of the mobility leads us to conclude that the mobility is limited by phonon scattering above approximately 4 K a nd interface scattering at lower temperatures. (C) 1994 American Insti tute of Physics.