INFLUENCE OF THERMODYNAMIC FACTORS ON GROWTH OF ALAS1-XSBX ALLOYS

Epitaxial layers of AlAs1-xSbx have been prepared by metalorganic vapo r phase deposition (MOCVD) in a horizontal, atmospheric-pressure quart z reactor. The influences of the V/III ratio and the input partial pre ssure of trimethylantimony were systematically studied. The experiment al results are in good agreement with the calculated ones, based on th ermodynamic considerations, which implies that the growth of AlAsSb in MOCVD is controlled predominantly by thermodynamics.