CHARACTERISTICS OF 3-MU-M-THICK SILICON SOLAR-CELLS USING BONDED SILICON-ON-INSULATOR WAFER

Three-mum-thick single-crystalline silicon solar cells were fabricated using a bonded silicon-on-insulator (SOI) wafer. The passivation effe ct due to the surface potential at the SOI layer/SiO2 back interface w as investigated. The surface potential was changed by externally appli ed voltages. When the SOI layer/SiO2 back interface was in the accumul ated condition, short-circuit current (I(sc)) and open-circuit voltage (V(oc)) were improved. Control of the surface potential is, therefore , effective in realizing high-efficiency thin silicon solar cells.