ELECTRON-HOLE COMPETITION EFFECTS IN PHOTOCURRENTS GENERATED BY MOVING SPACE-CHARGE FIELDS IN PHOTOCONDUCTIVE SEMICONDUCTORS WITH DEEP-LEVEL TRAPS

Authors
DAVIDSON F WANG CC TRIVEDI S
Citation
F. Davidson et al., ELECTRON-HOLE COMPETITION EFFECTS IN PHOTOCURRENTS GENERATED BY MOVING SPACE-CHARGE FIELDS IN PHOTOCONDUCTIVE SEMICONDUCTORS WITH DEEP-LEVEL TRAPS, Optics communications, 111(5-6), 1994, pp. 470-477
Citations number
10
Categorie Soggetti
Optics
Journal title
Optics communications → ACNP
ISSN journal
00304018
Volume
111
Issue
5-6
Year of publication
1994
Pages
470 - 477
Database
ISI
SICI code
0030-4018(1994)111:5-6<470:ECEIPG>2.0.ZU;2-G
Abstract
The dependence of dc photocurrents generated by moving optical interfe rence patterns inside two-sign charge carrier photoconductive semicond uctors with deep level traps on fringe spacing and velocity was determ ined. Sign reversal of the photocurrent as the grating spacing varies was predicted and verified experimentally in an InP:Fe crystal. Materi al characteristics for InP:Fe and CdTe:V samples were also determined using this effect.