INVESTIGATION ON THE COMPOSITION AND STRUCTURE OF SILICON-NITRIDE FILM PREPARED BY ECR-PECVD

In this paper, the effect of temperature on the composition and struct ure of the Si3N4 thin film is investigated. X-ray diffraction pattern and transmission electron microscope (TEM) analyses show that the Si3N 4 film undergoes the transition from amorphous to crystalline phase wi th increasing deposition temperature. Infra-red qualitative analysis s hows that the content of hydrogen decreases with increasing deposition temperature. The stoichiometric of Si3N4 is investigated by X-ray pho toelectron spectroscopy or electron spectroscopy for chemical analysis .