The fabrication of silicon surface-barrier telescope detectors operati
ng in the total-depletion mode is described. Tee detector parameters a
re listed. In order to improve the operation stability, ohmic contacts
are produced by depositing a thicker aluminum layer rather than by th
e transitional technique. As a result, the operating voltage is two to
four times higher, the insensitive layer of the detector is minimized
, and the detector can operate without failure for a long time.