DIFFUSION AND ELEMENTARY ATOMIC PROCESSES AT STEEPED SURFACES

Authors
Citation
Tt. Tsong et Ty. Fu, DIFFUSION AND ELEMENTARY ATOMIC PROCESSES AT STEEPED SURFACES, Progress in Surface Science, 53(2-4), 1996, pp. 233-239
Citations number
14
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical
Journal title
ISSN journal
00796816
Volume
53
Issue
2-4
Year of publication
1996
Pages
233 - 239
Database
ISI
SICI code
0079-6816(1996)53:2-4<233:DAEAPA>2.0.ZU;2-N
Abstract
The mobility of atoms at and near lattice step edges plays an importan t role in epitaxial growth and surface morphology of thin films, and t he dynamic behavior of surfaces at elevated temperature. We summarize our recent FIM studies on how atoms move and bind at step edges, how a toms can descend and ascend lattice steps, how in-layer atoms can move up to the upper terrace, and how these atomic processes are related t o various growth structures in thin film epitaxy.