HYDRODYNAMIC SIMULATION OF SEMICONDUCTOR-DEVICES OPERATING AT LOW-TEMPERATURE

Authors
LEONE A GNUDI A BACCARANI G
Citation
A. Leone et al., HYDRODYNAMIC SIMULATION OF SEMICONDUCTOR-DEVICES OPERATING AT LOW-TEMPERATURE, IEEE transactions on computer-aided design of integrated circuits and systems, 13(11), 1994, pp. 1400-1408
Citations number
16
Categorie Soggetti
Computer Application, Chemistry & Engineering","Computer Science Hardware & Architecture
Journal title
IEEE transactions on computer-aided design of integrated circuits and systems → ACNP
ISSN journal
02780070
Volume
13
Issue
11
Year of publication
1994
Pages
1400 - 1408
Database
ISI
SICI code
0278-0070(1994)13:11<1400:HSOSOA>2.0.ZU;2-9
Abstract
The problems related to the hydrodynamic simulation of semiconductor d evices operating at liquid nitrogen temperature are investigated, with emphasis on the numerical aspects. A discretization strategy is propo sed that allows one to incorporate in a conventional hydrodynamic prog ram typical low-temperature effects, such as Fermi statistics and inco mplete ionization, as well as proper boundary conditions. The suggeste d technique has been implemented in the hydrodynamic version of the pr ogram HFIELDS, and it has been tested by means of the simulation of a submicron n-channel MOSFET.