PERFORMANCE CHARACTERIZATION OF A MICROWAVE TRANSISTOR

The maximum transducer power gain G(Tmax) of a bilateral microwave tra nsistor is analytically expressed in terms of only noise figure F, inp ut VSWR V-i and the open-circuit parameters \z\. The analysis is based on a geometrical approach using the constant noise, input VSWR and ga in circles in the source and input impedance planes keeping the soluti on within the physical bounds. The corresponding source Z(S) and load Z(L) terminations are also obtained analytically. Cross-relations amon g the possible (F, V-i, G(Tmax)) triplets have been utilised in obtain ing the. performance contours of a microwave transistor at an operatin g frequency and bias condition. This type of representation of perform ance promises to be used in data sheets of microwave transistors by ma nufacturers in forthcoming years.