GAXIN1-XAS ALAS RESONANT-TUNNELING DIODES GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION/

Authors
KELLER BP YEN JC DENBAARS SP MISHRA UK
Citation
Bp. Keller et al., GAXIN1-XAS ALAS RESONANT-TUNNELING DIODES GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION/, Applied physics letters, 65(17), 1994, pp. 2159-2161
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
65
Issue
17
Year of publication
1994
Pages
2159 - 2161
Database
ISI
SICI code
0003-6951(1994)65:17<2159:GARDGB>2.0.ZU;2-L
Abstract
We report on the growth of GaxIn1-xAs/AlAs double-barrier heterostruct ures on InP and the fabrication of GaxIn1-xAs/AlAs resonant tunneling diodes (RTDs) by metalorganic chemical vapor deposition (MOCVD). High resolution x-ray diffraction measurements were used to evaluate the he terostructure interface quality. The RTDs achieved a room-temperature peak to valley ratio of 7.7:1 with peak current density of 9.6X10(4) A /cm(2). These are the best reported room-temperature results for any r eported RTDs grown by MOCVD. (C) 1994 American Institute of Physics.