CRYSTALLINE PHASES OF II-VI COMPOUND SEMICONDUCTORS GROWN BY PULSED-LASER DEPOSITION

II-VI compound semiconductors, ZnS, ZnSe, CdS, CdSe, and CdTe, were gr own epitaxially on (111) and (100) InP and GaAs substrates by excimer laser ablation. All of these films have good crystalline quality (full y in-plane aligned) and mirror-like surface morphology. It was found t hat, on (111)-oriented substrates, CdS and CdSe films were in the hexa gonal phase with the c axis perpendicular to the surface, while ZnS an d ZnSe films were in the cubic phase. The films grown on (100)-oriente d substrates were all cubic. These high quality films should be useful in optoelectronics applications. (C) 1994 American Institute of Physi cs.