ELECTRICAL-PROPERTIES OF THERMAL OXIDE GROWN USING DRY OXIDATION ON P-TYPE 6H-SILICON CARBIDE

The electrical properties of thermal oxides grown on p-type 6H-silicon carbide were investigated during this work. Thermal oxides were grown on 7x10(15) cm(-3) aluminum doped p-type 6H-silicon carbide at 1275 d egrees C in a dry oxygen ambient. Capacitance-voltage measurement indi cated the presence of a large positive charge in the oxide. The interf ace state density and effective charge density for these oxides was es timated to be 1x10(11) cm(-2) eV(-1) and 8X10(12) cm(-2) respectively. Bias temperature stress measurement showed the presence of negative b ias stress instability and slow trapping. (C) 1994 American Institute of Physics.