Pj. Mccann et al., GROWTH AND CHARACTERIZATION OF THALLIUM-DOPED AND GOLD-DOPED PBSE0.78TE0.22 LAYERS LATTICE-MATCHED WITH BAF2 SUBSTRATES, Applied physics letters, 65(17), 1994, pp. 2185-2187
We report on liquid phase epitaxial growth and Hall effect characteriz
ation of thallium- and gold-doped PbSe0.78Te0.22 layers lattice matche
d with BaF2 substrates. Thallium behaved as an acceptor allowing growt
h of compensated p-type PbSe0.78Te0.22 layers with hole concentrations
as high as 2.2x10(18) cm(-3). (Undoped PbSe0.78Te0.22 epitaxial layer
s were n-type with electron concentrations of 4.3x10(18) cm(-3).) The
transition from n-type to p-type occurs at approximately 1.2 at. % tha
llium in the growth solution. Gold also exhibited acceptor behavior fo
r low doping concentrations but behaved as a donor for doping concentr
ations greater than 1 at. % such that p-type layers could not be obtai
ned. Electron mobilities as high as 7846 cm(2)/V s at 77 K were measur
ed in this ternary alloy. (C) 1994 American Institute of Physics.