SELECTIVE EPITAXIAL-GROWTH OF GAINP BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION USING ETHYLDIMETHYLINDIUM AS IN-SOURCE

We have demonstrated the feasibility of selective epitaxial growth (SE G) of GaInP using low-pressure metal-organic chemical-vapor deposition (LPMOCVD) with the combination of ethyldimethylindium (EDMIn) and tri ethylgallium (TEGa) as the group-III sources. Complete selective epita xy can be achieved at a growth temperature of 675 degrees C and a grow th pressure of 40 Torr. The deposition of Ga-rich polycrystalline GaIn P on Si3N4 film occurs at lower temperatures. Although the incorporati on efficiency of TEGa into GaInP is much lower than that of trimethylg allium, the combination of EDMIn and TEGa has been found to be a good candidate for SEG of GaInP. Low-temperature photoluminescence shows th at the selectively grown epitaxial layer has good optical quality and is useful for light emitting device applications. (C) 1994 American In stitute of Physics.