MAGNETRON SPUTTER EPITAXY OF SIMGEN SI(001) STRAINED-LAYER SUPERLATTICES/

Epitaxial growth of SimGen/Si(001) strained-layer superlattices by mag netron sputter epitaxy is reported. Films of excellent crystal quality resulted from low-temperature sputter growth at T-s=350 degrees C, as is evidenced by Rutherford backscattering spectrometry minimum channe ling yields chi min=3% The absence of relaxation was demonstrated by R aman spectroscopy. Raman results on the first-order longitudinal-optic al Ge-Ge phonon proved pure Ge to be present in a Si30Ge6 superlattice , which indicates an interface broadening of the order of 2 monolayers . High resolution transmission electron microscopy confirmed the forma tion of smooth and well-defined interfaces between subsequent Si and G e layers. (C) American Institute of Physics.