THICKNESS DEPENDENCE OF FERROELECTRIC DOMAINS IN THIN CRYSTALLINE FILMS

Authors
Citation
F. Tsai et Jm. Cowley, THICKNESS DEPENDENCE OF FERROELECTRIC DOMAINS IN THIN CRYSTALLINE FILMS, Applied physics letters, 65(15), 1994, pp. 1906-1908
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
65
Issue
15
Year of publication
1994
Pages
1906 - 1908
Database
ISI
SICI code
0003-6951(1994)65:15<1906:TDOFDI>2.0.ZU;2-Y
Abstract
The thickness dependence of ferroelectric domains in thin free-standin g BaTiO3 crystalline films has been studied by transmission electron m icroscopy. It is found that the widths of ferroelectric domains decrea se as the film thickness decreases. This phenomenon may indicate that the ferroelectric properties of thin films are weakened due to surface relaxation effects, including lattice relaxation and a change of spon taneous polarization and charge compensation. The weakening of ferroel ectric domains is suggested as a transition state from ferroelectric t o paraelectric phase of the BaTiO3 thin film. The thickness of the sur face relaxation layer of totally nonferroelectric film is on the order of 10 nm. (C) 1994 American Institute of Physics.