DOSE-RATE EFFECTS ON RADIATION-INDUCED BIPOLAR JUNCTION TRANSISTOR GAIN DEGRADATION

Analysis of radiation damage in modern NPN bipolar transistors at vari ous dose rates is performed with a recently introduced charge separati on method and PISCES simulations. The charge separation method is veri fied with measurements on metal-oxide-semiconductor capacitors. Gain d egradation is more pronounced at lower dose rates. The charge separati on technique reveals that depletion-region spreading and effective rec ombination velocity are both greater for devices irradiated at lower d ose rates. (C) 1994 American Institute of Physics.