A. Chin et al., SPONTANEOUS FORMATION OF AL RICH AND GA RICH ALXGA1-XAS ALYGA1-YAS SUPERLATTICE AND STRONG ENHANCEMENT OF OPTICAL-PROPERTIES/, Applied physics letters, 65(15), 1994, pp. 1921-1923
Long range composition ordering and spontaneous formation of Al rich a
nd Ga rich AlxGa1-xAs/AlyGa1-yAs superlattice were demonstrated. This
was observed by cross-sectional transmission electron microscopy (TEM)
in a 280 angstrom Al0.4GaAs quantum well laser diode heterostructure
with Al0.7GaAs barriers grown on (111)B GaAs substrates. On the contra
ry, none of above superstructure was observed by TEM on a side-by-side
grown (100) oriented substrate. More evidence is shown in the (111)B
Al0.7GaAs barriers which were disordered due to a high growth temperat
ure and did not show any superstructure. 10 K photoluminescence was sh
own with 32 meV redshift and a 12-times peak intensity enhancement in
(111)B orientation. (C) 1994 American Institute of Physics.