EMPIRICAL RELATIONSHIP BETWEEN THE LOW-FREQUENCY NOISE SPECTRAL DENSITY AND THE TRANSCONDUCTANCE OF SILICON-ON-INSULATOR N-CHANNEL METAL-OXIDE-SEMICONDUCTOR TRANSISTORS

In this letter, the relationship between the input-referred low-freque ncy noise spectral density S(VG) and the transconductance g(m) of a la rge number of similar silicon-on-insulator n-channel metal-oxide-semic onductor transistors is investigated. As will be shown, a large, two o rders of magnitude dispersion is observed in the noise, which correspo nds with a factor two variation in g(m). It is demonstrated that the a verage S(VG) depends exponentially on the corresponding transconductan ce. This holds both for linear operation-in strong and weak inversion- and for saturation. The practical implications of these findings are d iscussed. (C) 1994 American Institute of Physics.