TUNABLE INGAAS GAAS INGAP LASER

Authors
DUTTA NK HOBSON WS LOPATA J ZYDZIK G
Citation
Nk. Dutta et al., TUNABLE INGAAS GAAS INGAP LASER, Applied physics letters, 70(10), 1997, pp. 1219-1220
Citations number
6
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
70
Issue
10
Year of publication
1997
Pages
1219 - 1220
Database
ISI
SICI code
0003-6951(1997)70:10<1219:TIGIL>2.0.ZU;2-R
Abstract
The fabrication and performance characteristics of a tunable InGaAs/Ga As/InGaP laser emitting near 980 nm are reported. The tunability is ac hieved using the thermoelectric effect of the substrate. A tuning rang e of >6 nm has been demonstrated using similar to 60 mA of thermoelect ric controller current. (C) 1997 American Institute of Physics.