MICROSTRUCTURAL AND ELECTRICAL-PROPERTIES OF PZT THIN-FILMS BY SOL-GEL PROCESS

Sol-gel method has been used for PZT thin films deposition onto platin ized silicon substrates. PZT thin films microstructure depends on the platinum electrode preparation and the thermal treatment duration. PZT is nucleated under a crystalline form generally described as ''rosett e''. The influence of the platinum electrode morphology on the final g rain size and the effect of the titanium as a contact layer between th e platinum and the silicon have been investigated. Different thermal t reatments have been investigated: the Rapid Thermal Annealing (RTA) me thod avoids pyrochlore phase formation and leads to small grain sizes. Electrical measurements have been done using top electrodes (platinum ) obtained by microlithography. The influence of the parameters descri bed on the hysteresis loop and resistivity is shown.