DESIGN METHODOLOGY OF POWER MOSFET TRANSI STORS

In this paper, a design method for Power MOSFET devices, based on the physical phenomena and electrical properties of the structure, is pres ented. This method is implemented in a software called Power MOSFET's Designer, which only needs three inputs: the layout (cells, design rul es, chip area), the breakdown voltage and the technological family cha racteristics, to define the SPICE equivalent circuit of the transistor . It is well suited to the simulation of power electronics circuits. A pplication examples are given.