CALCULATION OF THE ELASTIC PROPERTIES OF SEMICONDUCTORS

For 30 diamond- and zincblende-structure semiconductors, the bond leng th d, bond polarity alpha(p), bulk modulus B, elastic shear constants (c11 - c12)/2 and c44, bond-stretching force constant alpha, bond-bend ing force constant beta, internal displacement parameter xi, effective atomic charge Z, transfer parameter beta*, transverse charge e(T)*, and piezoelectric charge e(p) are calculated from bond orbital calcul ations based on the tight-binding method. The results are compared wit h previous theoretical calculations and experiments.