SUBSTRATE EFFECT ON CDTE LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

CdTe layers were grown by metalorganic vapor phase epitaxy (MOVPE) on different substrates like sapphire, GaAs, and CdTe wafers. The growth was carried out at the temperature 340 degrees C and time in the range of 2-4 h using dimethyl-cadmium and diisopropil-tellurium as precurso rs. The layers were studied by scanning electron microscopy, Rutherfor d backscattering spectroscopy, and high resolution low-temperature pho toluminescence spectroscopy. The surface morphology and RES and PL spe ctra of CdTe MOVPE layers are reported and the substrate effect on the layer properties is demonstrated. (C) 1997 American Institute of Phys ics.