Chemical-vapor deposited semiconducting diamond is an excellent sensor
material for harsh environments and high temperatures. The piezoresis
tive gauge factors measured at 300 K are in the ranges 200-550 and 6-2
5 for homoepitaxial and polycrystalline p-type diamond films, respecti
vely. The gauge factor for polycrystalline films decreases with decrea
sing resistivity, but increases with increasing temperature. A multi-s
ensor microchip, with a number of diamond test structures and a minimu
m feature size of 5 mu m, has been fabricated using a six-mask process
. The chip, employing diamond both as an electronic and a mechanical m
aterial, is expected to help commercialize integrated diamond sensors
in the near term.