LOW-TEMPERATURE ELECTRICAL TRANSPORTATION BEHAVIOR OF IN0.5GA0.5P GROWN ON GAAS(100) SUBSTRATE BY LIQUID-PHASE EPITAXY

Authors
ZHANG B LAN S LI LQ XU WJ YANG CQ LIU HD
Citation
B. Zhang et al., LOW-TEMPERATURE ELECTRICAL TRANSPORTATION BEHAVIOR OF IN0.5GA0.5P GROWN ON GAAS(100) SUBSTRATE BY LIQUID-PHASE EPITAXY, Solid state communications, 92(5), 1994, pp. 419-422
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
92
Issue
5
Year of publication
1994
Pages
419 - 422
Database
ISI
SICI code
0038-1098(1994)92:5<419:LETBOI>2.0.ZU;2-V
Abstract
The Hall effect and resistivity measurement over a wide temperature ra nge of 1.5 to 300 K for undoped InGaP epitaxial layer grown on GaAs (1 00) substrate by liquid phase epitaxy are reported for the first time. The conduction behavior of InGaP at low temperature similar to that o f Ge single crystal has been observed. With the help of two-band model , the conduction properties are analysed and the carrier scattering ma chnisms are also established.