Xz. Xu et al., GROWTH MECHANISMS OF BI2SR2CUO6 FILMS DEPOSITED BY SEQUENTIALLY IMPOSED LAYER EPITAXY, Solid state communications, 92(5), 1994, pp. 443-447
Sequentially Imposed Layer Epitaxy (SILE) process is used to deposit B
i2Sr2CuO6 thin films on SrTiO3 and MgO single crystals. The deposition
sequence is completely controlled by the oscillations of the diffract
ed intensity of high energy electrons (RHEED). This study leads to the
evaluation of the sticking probabilities of all the metal elements in
cluded. We propose growth mechanisms to interpret these results. Using
optimal deposition parameters, stoichiometric films are obtained, wit
he orientation perpendicular to the substrate surface, and a typical r
oughness of +/- 5 Angstrom.