GROWTH MECHANISMS OF BI2SR2CUO6 FILMS DEPOSITED BY SEQUENTIALLY IMPOSED LAYER EPITAXY

Sequentially Imposed Layer Epitaxy (SILE) process is used to deposit B i2Sr2CuO6 thin films on SrTiO3 and MgO single crystals. The deposition sequence is completely controlled by the oscillations of the diffract ed intensity of high energy electrons (RHEED). This study leads to the evaluation of the sticking probabilities of all the metal elements in cluded. We propose growth mechanisms to interpret these results. Using optimal deposition parameters, stoichiometric films are obtained, wit he orientation perpendicular to the substrate surface, and a typical r oughness of +/- 5 Angstrom.