HIGH-PERFORMANCE INGAASP INP LASERS ON SI SUBSTRATES/

The performance of 1.3 mu m InGaAsP buried heterostructure lasers with both n- and p-type contacts fabricated on one side is discussed. The lasers are flipchip bonded to Si wafers. The DC characteristics of the laser (I-th similar or equal to 12-15mA, eta = 0.19mA/mW) are identic al to those obtained on conventional metal heatsinks. The modulation b andwidth exceeds 3 GHz at a bias current of 20mA. A bandwidth of 1.5 G Hz can be obtained at a current of only 3 mA above threshold. The flip chip bonded lasers are shown to be stable up to at least 65 degrees C.