ELECTROABSORPTION MODULATION IN STRAINED PIEZOELECTRIC INGAAS INP MULTIQUANTUM WELLS OPERATING AT LAMBDA-SIMILAR-OR-EQUAL-TO-1.55 MU-M/

Authors
PABLA AS HOPKINSON M DAVID JPR KHOO EA REES GJ
Citation
As. Pabla et al., ELECTROABSORPTION MODULATION IN STRAINED PIEZOELECTRIC INGAAS INP MULTIQUANTUM WELLS OPERATING AT LAMBDA-SIMILAR-OR-EQUAL-TO-1.55 MU-M/, Electronics Letters, 30(20), 1994, pp. 1707-1708
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
20
Year of publication
1994
Pages
1707 - 1708
Database
ISI
SICI code
0013-5194(1994)30:20<1707:EMISPI>2.0.ZU;2-1
Abstract
An investigation of absorption modulation using strained piezoelectric InGaAs/InP multiquantum wells grown on (111)B InP substrates is prese nted. Strong excitonic features are observed in the room temperature p hotocurrent spectra for a structure with 50 Angstrom quantum wells und er 0.6% compressive strain. The application of a reverse bias results in a large blue-shift of the absorption edge of up to 8 nm/V.