INGAAS INALAS MULTI-QUANTUM-WELL WAVE-GUIDED PIN PHOTODIODES WITH WIDE TUNABILITY AND AVALANCHE MULTIPLICATION/

Authors
WAKITA K KOTAKA I KOZEN A
Citation
K. Wakita et al., INGAAS INALAS MULTI-QUANTUM-WELL WAVE-GUIDED PIN PHOTODIODES WITH WIDE TUNABILITY AND AVALANCHE MULTIPLICATION/, Electronics Letters, 30(20), 1994, pp. 1711-1713
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
20
Year of publication
1994
Pages
1711 - 1713
Database
ISI
SICI code
0013-5194(1994)30:20<1711:IIMWPP>2.0.ZU;2-C
Abstract
A new high-speed, waveguided InP based on the InGaAs/InA1As multiquant um-well pin photodiode with gain and fabricated by metal organic vapou r phase epitaxy is reported. The quantum-confined Stark effect can be used to lune this diode over a 250 nm range in the wavelength region a round 1.55 mu m. A dB bandwidth of more than 12 GHz and avalanche mult iplication have been observed.