K. Wakita et al., INGAAS INALAS MULTI-QUANTUM-WELL WAVE-GUIDED PIN PHOTODIODES WITH WIDE TUNABILITY AND AVALANCHE MULTIPLICATION/, Electronics Letters, 30(20), 1994, pp. 1711-1713
A new high-speed, waveguided InP based on the InGaAs/InA1As multiquant
um-well pin photodiode with gain and fabricated by metal organic vapou
r phase epitaxy is reported. The quantum-confined Stark effect can be
used to lune this diode over a 250 nm range in the wavelength region a
round 1.55 mu m. A dB bandwidth of more than 12 GHz and avalanche mult
iplication have been observed.