CALCULATION OF SHIFT OF AVALANCHE TRANSIT-TIME PHASE DELAY DUE TO OPTICALLY INJECTED CARRIERS IN INDIUM-PHOSPHIDE AVALANCHE-DIODES

Authors
BANERJEE JP MUKHERJEE R
Citation
Jp. Banerjee et R. Mukherjee, CALCULATION OF SHIFT OF AVALANCHE TRANSIT-TIME PHASE DELAY DUE TO OPTICALLY INJECTED CARRIERS IN INDIUM-PHOSPHIDE AVALANCHE-DIODES, Electronics Letters, 30(20), 1994, pp. 1716-1717
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
20
Year of publication
1994
Pages
1716 - 1717
Database
ISI
SICI code
0013-5194(1994)30:20<1716:COSOAT>2.0.ZU;2-G
Abstract
A computer method for the calculation of the phase shift due to optica lly injected carriers in an InP avalanche transit time diode has been suggested using the numerically simulated negative resistance profiles in the depletion layer of the diode. The results show that the phase shift due to hole injection is larger than that due to electron inject ion which explains the pronounced effect of photogenerated hole leakag e current in modulating the microwave properties of InP diodes.