SPATIALLY UNIFORM DEGRADATION IN NMOSFETS - EVIDENCE FROM GATE CAPACITANCE AND CHARGE-PUMPING CURRENT

Authors
LING CH ANG DS TAN SE
Citation
Ch. Ling et al., SPATIALLY UNIFORM DEGRADATION IN NMOSFETS - EVIDENCE FROM GATE CAPACITANCE AND CHARGE-PUMPING CURRENT, Electronics Letters, 30(20), 1994, pp. 1720-1722
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
20
Year of publication
1994
Pages
1720 - 1722
Database
ISI
SICI code
0013-5194(1994)30:20<1720:SUDIN->2.0.ZU;2-L
Abstract
A linear relationship is found to exist between the decrease in the ga te-to-drain capacitance with stress time and the corresponding increas e in charge pumping current, in hot-electron stressed nMOSFETs. The re sult supports a spatially uniform degradation at the Si/SiO2 interface , that starts within the LDD junction and progresses into the channel.