THE EFFECT OF LATERAL LEAKAGE CURRENT ON THE EXPERIMENTAL GAIN CURRENT-DENSITY CURVE IN QUANTUM-WELL RIDGE-WAVE-GUIDE LASERS

Citation
Sy. Hu et al., THE EFFECT OF LATERAL LEAKAGE CURRENT ON THE EXPERIMENTAL GAIN CURRENT-DENSITY CURVE IN QUANTUM-WELL RIDGE-WAVE-GUIDE LASERS, IEEE journal of quantum electronics, 30(10), 1994, pp. 2245-2250
Citations number
25
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
00189197
Volume
30
Issue
10
Year of publication
1994
Pages
2245 - 2250
Database
ISI
SICI code
0018-9197(1994)30:10<2245:TEOLLC>2.0.ZU;2-A
Abstract
We stress the importance of considering the effect of lateral leakage current on the material gain/current-density characteristics measured from ridge-waveguide diode lasers. It is found that the inclusion of l ateral leakage current is crucial to obtaining a self-consistent resul t. An experimental demonstration has been performed on an In0.2Ga0.8As /AlGaAs strained single quantum-well laser sample, from which a gain c urve with transparency current density of 53.8 A/cm2 was obtained. By using devices of different geometries, the variation of leakage curren ts is measured and the accuracy of the resultant gain curves is discus sed.