A STUDY OF LASER-EMISSION WAVELENGTH VARIATIONS IN 1.5-MU-M INGAASP INP BRS LASER-DIODES - THEORETICAL-MODEL AND EXPERIMENT/

This is a study of the dependence of the emission wavelength on the ca vity length observed in laser diodes with InGaAsP/InP buried ridge str ipe (BRS) structure. Theoretical calculations were made taking into ac count the variation of the threshold gain due to the influence of the cavity length on the total optical loss and, therefore, on the level o f the carrier density at the threshold. This density affects the spect ral position of the gain peak thus creating the regular dependence of the emission wavelength on the cavity length. The band-shrinkage effec t and the free-carrier absorption effect are also considered. In sampl es covering the spectral range of 1.46-1.53 mum, the calculated and ex perimental results agree satisfactorily.