ION-INDUCED ANNEALING OF DAMAGE IN GAAS IMPLANTED WITH ARGON IONS

The process of the structure restoration of GaAs implanted with Ar+ io ns at the ion current densities of 10 and 25 muA/cm2 and in the fluenc e interval of 6 x 10(13) - 1 x 10(16) cm-2 has been analysed on the ba sis of Raman scattering (RS) and Rutherford backscattering (RBS) data taken into account the target heating during the irradiation. The curr ent dependence of threshold fluences which the recrystallization begin at is explained in assumption that the structure restoration is cause d of by the mobile monovacancies interaction with the stable vacancy c luster. The existence of the critical ion fluence corresponded to the most perfect GaAs structure has been shown.