GROWTH AND SHRINKAGE OF SURFACE STACKING-FAULTS IN FLOAT-ZONE AND CZOCHRALSKI SILICON

A model for the growth and shrinkage of stacking faults in silicon is presented. It accounts for interstitial traps and a nonuniform concent ration of intrinsic point defects. The complete system of balance equa tions of intrinsic point defects is solved numerically to simulate the kinetics of stacking faults during oxidation under the assumption tha t float-zone silicon contains less interstitial traps than Czochralski silicon. Investigation of the influence of different interstitial tra p concentrations on the growth and shrinkage of surface stacking fault s shows that the kinetics of surface stacking faults is not strongly a ffected by the presence of interstitial traps. Surface stacking faults are expected to grow in float-zone and Czochralski silicon in a simil ar way.