ELECTRICAL AND STRUCTURAL-PROPERTIES OF RAPID THERMALLY ANNEALED BORON-DOPED SILICON FILMS DEPOSITED BY PLASMAS-ENHANCED CHEMICAL-VAPOR-DEPOSITION

The structural, electrical, and piezoresistive properties of in situ b oron-doped thin silicon layers deposited by plasma-enhanced chemical-v apor deposition at 320-degrees-C on oxidized silicon substrates and su bjected to a rapid thermal anneal (1100-degrees-C for 20 s) have been investigated. Macroscopic electrical parameters derived from resistivi ty and Hall-effect measurements were compared to microscopic character istics deduced from optical data to explain the low-temperature coeffi cients of resistance measured on this polycrystalline material. Finall y, the piezoresistivity gauge factors of these heavily doped layers ar e discussed in view of their internal stress state and of other struct ural characteristics.