P. Jeanjean et al., ELECTRICAL AND STRUCTURAL-PROPERTIES OF RAPID THERMALLY ANNEALED BORON-DOPED SILICON FILMS DEPOSITED BY PLASMAS-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Journal of applied physics, 76(8), 1994, pp. 4682-4688
The structural, electrical, and piezoresistive properties of in situ b
oron-doped thin silicon layers deposited by plasma-enhanced chemical-v
apor deposition at 320-degrees-C on oxidized silicon substrates and su
bjected to a rapid thermal anneal (1100-degrees-C for 20 s) have been
investigated. Macroscopic electrical parameters derived from resistivi
ty and Hall-effect measurements were compared to microscopic character
istics deduced from optical data to explain the low-temperature coeffi
cients of resistance measured on this polycrystalline material. Finall
y, the piezoresistivity gauge factors of these heavily doped layers ar
e discussed in view of their internal stress state and of other struct
ural characteristics.