EFFECT OF AI OVERLAYER THICKNESS ON THE LEAKAGE CURRENT OF RADIATION DETECTORS USING NB AL-ALOX/NB SUPERCONDUCTING TUNNEL-JUNCTIONS/

Authors
MATSUMURA A TAKAHASHI T KURAKADO M
Citation
A. Matsumura et al., EFFECT OF AI OVERLAYER THICKNESS ON THE LEAKAGE CURRENT OF RADIATION DETECTORS USING NB AL-ALOX/NB SUPERCONDUCTING TUNNEL-JUNCTIONS/, Journal of applied physics, 76(8), 1994, pp. 4761-4765
Citations number
27
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
76
Issue
8
Year of publication
1994
Pages
4761 - 4765
Database
ISI
SICI code
0021-8979(1994)76:8<4761:EOAOTO>2.0.ZU;2-W
Abstract
Nb/Al-AlOx/Nb superconducting tunnel junctions for the application of radiation detectors were fabricated using dc magnetron sputtering. The surface morphology of polycrystalline Nb films was observed using an atomic force microscope. Junctions with various Al film thicknesses we re fabricated. The leakage current of the junctions is found to decrea se as the Al thickness increases, indicating an improvement of the Al film coverage over the Nb surface. X rays were detected with the junct ions prepared and the low leakage property across the junction makes p ossible x-ray detection with various size junctions up to 200 x 200 mu m2.