THE EFFECT OF GD DOPING ON CARRIER CONCENTRATION IN INGAASSB LAYERS GROWN BY LIQUID-PHASE EPITAXY

Authors
DOLGINOV LM TUNITSKAYA IV POLYAKOV AY DRUZHININA LV VINOGRADOVA GV SMIRNOV NB GOVORKOV AV BORODINA OM KOZHUKHOVA EA BALMASHNOV AA MILNES AG
Citation
Lm. Dolginov et al., THE EFFECT OF GD DOPING ON CARRIER CONCENTRATION IN INGAASSB LAYERS GROWN BY LIQUID-PHASE EPITAXY, Thin solid films, 251(2), 1994, pp. 147-150
Citations number
15
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
251
Issue
2
Year of publication
1994
Pages
147 - 150
Database
ISI
SICI code
0040-6090(1994)251:2<147:TEOGDO>2.0.ZU;2-P
Abstract
It is shown that addition of Gd to the melt during liquid phase epitax y growth of InGaAsSb layers greatly reduces contamination of the sampl es with residual donor impurities, such as sulfur and silicon. The eff ect is related to Gd gettering of these impurities in the melt.