DECOMPOSITION OF TERTIARYBUTYLPHOSPHINE (TBP) ON THE SI(001) SURFACE STUDIED BY TDS, AES, AND XPS

Authors
MURATA J SUZUKI Y SANADA N FUKUDA Y
Citation
J. Murata et al., DECOMPOSITION OF TERTIARYBUTYLPHOSPHINE (TBP) ON THE SI(001) SURFACE STUDIED BY TDS, AES, AND XPS, Surface science, 319(1-2), 1994, pp. 120000013-120000016
Citations number
15
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
319
Issue
1-2
Year of publication
1994
Pages
120000013 - 120000016
Database
ISI
SICI code
0039-6028(1994)319:1-2<120000013:DOT(OT>2.0.ZU;2-K
Abstract
Decomposition of tertiarybutylphosphine (TBP) on a clean Si(001) surfa ce has been;studied by thermal desorption spectroscopy (TDS), Auger el ectron spectroscopy (AES), and X-ray photoelectron spectroscopy (XPS). XPS results indicate that TBP adsorbs molecularly on the surface at R T. We find that TBP starts to decompose at about 100 degrees C and thi s temperature is lower by about 300 degrees C than in the gas phase. I t decomposes to evolve 2-methyl-propyl radicals, 2-methyl-propylene, a nd hydrogen, leaving phosphorus on the surface. The AES result shows t hat no carbon species remain on the surface above 600 degrees C.