SEMICONDUCTOR-LASERS WITHOUT POPULATION-INVERSION

We propose a new scheme for lasing without population inversion that u tilizes interferences in double-quantum-well intersubband transitions. In contrast to the previous inversionless laser schemes based on atom ic systems, the new proposal permits us to use band-gap engineering to choose the subband energies, coupling strengths, and decay rates, as desired, and permits us to create a laser system that does not require population inversion. We present detailed calculations on a specific scheme and discuss possible extensions.