E. Yamaichi et al., METHOD TO OBTAIN LOW-DISLOCATION-DENSITY REGIONS BY PATTERNING WITH SIO2 ON GAAS SI FOLLOWED BY ANNEALING/, JPN J A P 2, 33(10B), 1994, pp. 120001442-120001444
A method to obtain low-dislocation-density regions in GaAs on Si has b
een proposed. The method comprises performing the thermal cycle for Ga
As, which is partially covered by SiO2 patterning, on Si. Dislocations
in the GaAs layer on Si are gathered at the periphery of the SiO2 pat
tern due to surface stress modulation. This method yields the dislocat
ion density of less than 10(5) cm(-2) in the uncovered region.