DISCUSSION OF THE LINEWIDTH ENHANCEMENT FACTOR-ALPHA OF GAAS GAALAS QUANTUM-WELL LASERS/

The fundamental contributions of optical interband transitions and the plasma effect of free carriers to the linewidth enhancement factor al pha of Ga(Al)As quantum well lasers has been discussed with respect to the dependence on the main laser structure parameters: confinement pr ofile, number of quantum wells and well width. The results show clearl y that alpha increases with carrier density. Particularly, in SQW-SCH laser structures with thin quantum wells, alpha is enlarged drasticall y by the plasma effect due to the necessary high threshold carrier den sities. Both, the use of a GRINSCH structure or a MQW laser design red uce the free carrier component of alpha considerably. Furthermore, onl y a weak dependence of the alpha factor on the number of quantum wells is found in the case of MQW lasers. Finally, a comparison of alpha-si mulations and measurements on SQW-GRINSCH and 3QW-SCH BCRW laser struc tures shows a good agreement.