ULTRATHIN SIO2-FILMS ON SI FORMED BY N2O-PLASMA OXIDATION TECHNIQUE

Authors
MASUDA A YONEZAWA Y MORIMOTO A KUMEDA M SHIMIZU T
Citation
A. Masuda et al., ULTRATHIN SIO2-FILMS ON SI FORMED BY N2O-PLASMA OXIDATION TECHNIQUE, Applied surface science, 81(3), 1994, pp. 277-280
Citations number
8
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
81
Issue
3
Year of publication
1994
Pages
277 - 280
Database
ISI
SICI code
0169-4332(1994)81:3<277:USOSFB>2.0.ZU;2-X
Abstract
N2O-plasma oxidation of (111) and (100) Si was performed for the first time. The oxidation proceeds without conspicuous retardation compared with the case of O2-plasma oxidation. Accumulation of N atoms at or n ear the SiO2/Si interface was observed by X-ray photoelectron spectros copy (XPS). It is found that the content of incorporated N atoms incre ases only at the early stage of the oxidation. The interfacial P(b)-ce nter density is also evaluated by electron spin resonance.