Fj. Zhang et al., THE INVESTIGATION OF GROWTH-CHARACTERISTICS OF SINGLE QUANTUM-WELLS GROWN ON (311)GAAS SUBSTRATES, Materials science & engineering. B, Solid-state materials for advanced technology, 27(1), 1994, pp. 7-12
High quality AlxGa1-xAs/GaAs single quantum wells have been grown succ
essfully on (311)A and (311)B Si-doped GaAs substrates by molecular be
am epitaxy (MBE) at 600 degrees C and 650 degrees C. Photoluminescence
(PL) spectra of these samples are measured at 1.8 K. The calculations
of the PL peak energies agree with those of experiments, suggesting t
hat the conduction band offset at the interface between AlxGa1-xAs and
GaAs is 65% and that the electron effective mass in both AlxGa1-xAs a
nd GaAs in growth temperature on (311)A and (311)B substrates is discu
ssed. We find that the surface of GaAs in (311)B can capture impuritie
s more easily than that in (311)A.