STRUCTURE OF THE B SI(100) SURFACE AT LOW BORON COVERAGE STUDIED BY SCANNING-TUNNELING-MICROSCOPY/

Authors
KULAKOV MA ZHANG Z ZOTOV AV BULLEMER B EISELE I
Citation
Ma. Kulakov et al., STRUCTURE OF THE B SI(100) SURFACE AT LOW BORON COVERAGE STUDIED BY SCANNING-TUNNELING-MICROSCOPY/, Applied surface science, 103(4), 1996, pp. 443-449
Citations number
13
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
103
Issue
4
Year of publication
1996
Pages
443 - 449
Database
ISI
SICI code
0169-4332(1996)103:4<443:SOTBSS>2.0.ZU;2-4
Abstract
Scanning tunnelling microscopy is used to study the structure of the B /Si(100) surface at low boron coverage, the surface being prepared by high-temperature annealing of heavily B-doped Si(100) samples. The sur face reproducibly shows features which are identified as being induced by boron atoms. Based on high-resolution scanning tunnelling microsco py measurements performed at different tip-sample biases, a structural model of the boron-induced features is proposed. The effect of the fo rmation conditions on the atomic structure of the B/Si(100) surface is discussed.