ALL-BINARY INAS GAAS OPTICAL WAVE-GUIDE PHASE MODULATOR AT 1.06 MU-M/

Authors
HASENBERG TC KOEHLER SD YAP D KOST A GARMIRE EM
Citation
Tc. Hasenberg et al., ALL-BINARY INAS GAAS OPTICAL WAVE-GUIDE PHASE MODULATOR AT 1.06 MU-M/, IEEE photonics technology letters, 6(10), 1994, pp. 1210-1212
Citations number
8
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
6
Issue
10
Year of publication
1994
Pages
1210 - 1212
Database
ISI
SICI code
1041-1135(1994)6:10<1210:AIGOWP>2.0.ZU;2-6
Abstract
We demonstrate the use of multiple [(InAs) (GaAs)]/GaAs short-period s trained-layer superlattice quantum wells for optical waveguide modulat ion at 1.06 mum. We achieve pi phase modulation with 2.3 V applied (V( pi) x L = 4.6 V mm, or 39-degrees/V mm) in the presence of negligible absorption change using this all-binary modulator.