THERMAL REGROWTH OF SI(100) DAMAGED BY NE, AR, AND XE ION-BOMBARDMENT

Thermally induced regrowth of Si(100) after ion sputtering with 3 keV Ne, Ar, and Xe ions has been studied with angle resolved photoemission . Significant differences are found in the regrowth: depending on the kind of ions used for the sputtering. While the Ne sputtered surface w as fully recovered after annealing at 750 degrees C, the Ar and Xe tre ated surfaces remained disordered after such treatment. It is conclude d that Ne ion bombardment induces a different defect system than that obtained after bombardment with Ar or Xe ions at the same energy.